Type Designator: IRF9530N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 79 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 14 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 38.7 nC
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Package: TO220AB
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