Type Designator: FQPF4N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 36 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 70 pF
Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm
Package: TO-220F
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